DISCRETE SEMICONDUCTORS
DATA SHEET
BF904WR N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 1995 Apr 25
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES • Specially designed for use at 5 V supply voltage • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect
transistor in a plas...