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BF904AWR

Part Number	BF904AWR
Manufacturer	NXP
Description	N-channel dual gate MOS-FETs
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product speciﬁcation Superse...
Datasheet	BF904AWR PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product speciﬁcation Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product speciﬁcation N-channel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect transistors.
The transistors consist of an...

Similar Datasheet

BF904A N-channel dual gate MOS-FETs - NXP
BF904AR N-channel dual gate MOS-FETs - NXP
BF904AWR N-channel dual gate MOS-FETs - NXP

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