RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON
TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
DComplement to MMPT8550LT1 TCollector Current:Ic=500mA .
,LCollector Dissipation:Pc=225mW(Tc=25oC)
SOT-23
1
1.
2.
4 1.
3
3
2 1.
BASE 2.
EMITTER 3.
COLLECTOR
2.
9 1.
9 0.
95 0.
95 0.
4
O Unit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base Voltage
NCollector-Emitter Voltage
Emitter-Base Voltage
OCollector Current
Collector Dissipation Ta=25oC* Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
40 25 6 500 225 150 -55-150
(Ta=25 oC)
Unit
V V V mA mW OC
O
C
TElectrical Characteristics CCharacteristic
Collector-Base Breakdown Volta...