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MMBT8050LT1

WEJ
Part Number MMBT8050LT1
Manufacturer WEJ
Description NPN EPITAXIAL SILICON TRANSISTOR
Published May 10, 2018
Detailed Description RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATIO...
Datasheet PDF File MMBT8050LT1 PDF File

MMBT8050LT1
MMBT8050LT1

Overview
RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION DComplement to MMPT8550LT1 TCollector Current:Ic=500mA .
,LCollector Dissipation:Pc=225mW(Tc=25oC) SOT-23 1 1.
2.
4 1.
3 3 2 1.
BASE 2.
EMITTER 3.
COLLECTOR 2.
9 1.
9 0.
95 0.
95 0.
4 O Unit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base Voltage NCollector-Emitter Voltage Emitter-Base Voltage OCollector Current Collector Dissipation Ta=25oC* Junction Temperature RStorage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 40 25 6 500 225 150 -55-150 (Ta=25 oC) Unit V V V mA mW OC O C TElectrical Characteristics CCharacteristic Collector-Base Breakdown Voltage ECollector-Emitter Breakdown Voltage# Emitter-Base Breakdown Voltage LCollector Cutoff Current Emitter Cutoff Current EDC Current Gain DC Current Gain JDC Current Gain Collector-Emitter Saturation Voltage EBase-Emitter Saturation Voltage Base-Emitter Voltage WOutput Capacitance (Ta=25 oC) Symbo...


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