Part Number
|
HY3410MF |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
May 13, 2018 |
Detailed Description
|
HY3410P/M/B/PS/PM/MF
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Note...
|
Datasheet
|
HY3410MF
|
Overview
HY3410P/M/B/PS/PM/MF
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
100 ±25 175 -55 to 175 140
IDM Pulsed Drain Current * ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
550** 140 100 285 143 0.
53 62.
5
EAS Avalanche Energy, Single Pulsed
L=0.
5mH
Note * Repetitive rating ; pulse width limiited by ...
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