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HY3410PM

Part Number	HY3410PM
Manufacturer	HOOYI
Description	N-Channel Enhancement Mode MOSFET
Published	May 13, 2018
Detailed Description	HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Note...
Datasheet	HY3410PM PDF File

Overview

HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 550** 140 100 285 143 0.
53 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH Note * Repetitive rating ; pulse width limiited by ...

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