Part Number
|
BL6N65F |
Manufacturer
|
GME |
Description
|
N-Channel Power Mosfet |
Published
|
May 18, 2018 |
Detailed Description
|
6A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.7Ω@ VGS = 10V Ultra low gate charge ( typical 20 nC )
Pb
Lead-...
|
Datasheet
|
BL6N65F
|
Overview
6A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.
7Ω@ VGS = 10V Ultra low gate charge ( typical 20 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 10 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL6N65F
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS EAR dv/dt
PD
RθJA
TJ
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
TOPR, Tstg Ope...
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