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BL6N60

GME
Part Number BL6N60
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Silicon N-Channel Power MOSFET FEATURES  Fast Switching.  Low ON Resistance(Rdson≤1.7Ω). Pb Lead-free  LowGateC...
Datasheet PDF File BL6N60 PDF File

BL6N60
BL6N60


Overview
Silicon N-Channel Power MOSFET FEATURES  Fast Switching.
 Low ON Resistance(Rdson≤1.
7Ω).
Pb Lead-free  LowGateCharge(TypicalData:19nC).
 Low Reverse transfer capacitances(Typical:8pF).
 100% Single Pulse avalanche energy Test.
Applications: Power switch circuit of adaptor and charger.
Production specification BL6N60 TO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 600 VGSS Gate -Source voltage ±30 ID Continuous Drain Current 6.
0 IDM Pulsed Drain Current a1 24 EAS Single Pulse Avalanche Energy a2 250 PD Power Dissipation Derating Factor above 25°C 83 0.
67 RθJA Junction-to-Ambient 62 RθJC Junction-to-Case 1.
5 TL Maximum Temperature for Soldering 300 TJ Junction Temperature +150 Tstg Operating and Storage Temperature -55 to +150 Units V V A A mJ W W/℃ ℃/W ℃/W ℃ ℃ ℃ X139 Rev.
A www.
gmesemi.
com 1 Production specification Silicon N-Channel Powe...



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