Production specification
P-Channel Enhancement Mode Field Effect
Transistor BL2303
FEATURES
Electrostatic Sensitive Devices.
VDS (V) = -30V ID = -2.
7A(VGS =-10V) RDS(ON) 190mΩ (VGS = -10V)
RDS(ON) 330mΩ (VGS = -4.
5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect
transistor.
Switching application.
ORDERING INFORMATION
Type No.
Marking
BL2303
2303
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS ID IDM
PD
RθJA
Gate -Source voltage
Continuous Drain Current
@TC=25℃ @TC=70℃
Pulsed Drain Current
Power Dissipation
@TC=25℃ @TC=70℃ @TA=25℃ @TA=70℃
Thermal resistance,Junctio...