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BL2302

GME
Part Number BL2302
Manufacturer GME
Description N-Channel Enhancement Mode Field Effect Transistor
Published Apr 13, 2015
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES z 20V/3.6A,RDS(ON)=85m_@V...
Datasheet PDF File BL2302 PDF File

BL2302
BL2302

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES z 20V/3.
6A,RDS(ON)=85m_@VGS=4.
5V.
Pb z 20V/3.
1A,RDS(ON)=115m_@VGS=2.
5V.
Lead-free z Super high density cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability.
APPLICATIONS z Power Management in Notebook.
z Portable Equipment.
z DC/DC Converter.
ORDERING INFORMATION SOT-23 Type No.
BL2302 Marking A2T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±8 2.
8 2.
2 10 PD Power Dissipation 1.
25 RθJA Thermal resistance,Junction-to-Ambient 105 TJ Operating Junction Temperature 150 Units V V A A W ℃/W ℃ C217 Rev.
A www.
gmicroelec.
com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless oth...


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