Part Number
|
BL2N60D |
Manufacturer
|
GME |
Description
|
N-Channel Power Mosfet |
Published
|
May 18, 2018 |
Detailed Description
|
2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-...
|
Datasheet
|
BL2N60D
|
Overview
2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.
8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.
0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.
0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N60I/2N60D
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS ID
IDP VGSS
Drain-Source voltage Drain current continuous
Drain current Pulsed (Note2) Gate -Source voltage
(TC=25℃) (TC=100℃)
600
2.
0 1.
26
8.
0
±30
V A
A V
IAR EAR EAS dv/dt
Avalanche Current (Note2)
2.
0
Avalanche Energy
Repet...
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