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BL2N65D

Part Number	BL2N65D
Manufacturer	GME
Description	N-Channel Power Mosfet
Published	May 18, 2018
Detailed Description	2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.8Ω@VGS=10V. Pb  Ultra Low gate charge (typical 9.0nC) Lead-...
Datasheet	BL2N65D PDF File

Overview

2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.
8Ω@VGS=10V.
Pb  Ultra Low gate charge (typical 9.
0nC) Lead-free  Low reverse transfer capacitance (Crss = typical 5.
0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL2N65I/2N65D TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDM VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage (TC=25℃) 650 2.
0 8.
0 ±30 V A A V IAR Avalanche Current (Note2) 2.
0 A EAR EAS dv/dt Avalanche Energy Repetitive(Note 2) 4.
...

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