4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.
5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.
0 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL4N60 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage TO-220AB Value 600 ±30 Units V V IAR Avalanche Current (Note1) 4.
4 A ID Continuous Drain Current 4.
0 A IDM EAS EAR dv/dt PD θJA θJC θCS TJ Pulsed Drain Current Avalanche Energy Single Pulsed(Note2) Repetitive Peak Diode Recovery dv/dt(N...

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