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BL4N65F

Part Number	BL4N65F
Manufacturer	GME
Description	N-Channel Power MOSFET
Published	May 18, 2018
Detailed Description	4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-...
Datasheet	BL4N65F PDF File

Overview

4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.
5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.
0 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL4N65F MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature ITO-220AB Value 650 ±30 4.
0 16 260 10.
6 4.
5 36 62.
5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃ ℃ X100 Rev.
A www.
gmesemi.
com 1 Production specification 4A,650V N-Channel Power Mosfet BL4N65F ELECTRICAL CHARACTERISTICS @ Ta=25℃ unles...

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