Part Number
|
BL6N60 |
Manufacturer
|
GME |
Description
|
N-Channel Power Mosfet |
Published
|
May 18, 2018 |
Detailed Description
|
Silicon N-Channel Power MOSFET
FEATURES
Fast Switching. Low ON Resistance(Rdson≤1.7Ω).
Pb
Lead-free
LowGateC...
|
Datasheet
|
BL6N60
|
Overview
Silicon N-Channel Power MOSFET
FEATURES
Fast Switching.
Low ON Resistance(Rdson≤1.
7Ω).
Pb
Lead-free
LowGateCharge(TypicalData:19nC).
Low Reverse transfer capacitances(Typical:8pF).
100% Single Pulse avalanche energy Test.
Applications:
Power switch circuit of adaptor and charger.
Production specification
BL6N60
TO-220AB
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
600
VGSS
Gate -Source voltage
±30
ID Continuous Drain Current
6.
0
IDM Pulsed Drain Current a1
24
EAS Single Pulse Avalanche Energy a2
250
PD
Power Dissipation Derating Factor above 25°C
83 0.
67
RθJA Junction-to-Ambient
62
RθJC
Jun...
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