NPN Silicon Digital
Transistor
• Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BCR533
32 1
C 3
R1 R2
1 B
Type BCR533
2
E
EHA07184
Marking XCs
Pin Configuration 1=B 2=E 3=C
Package SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature
VCEO VCBO Vi(fwd) Vi(rev) IC Ptot
Tj Tstg
50 50 50 10 500 330
150 -65 .
.
.
150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 215
1For calculation of RthJA please refer ...