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BCR512

Infineon Technologies AG
Part Number BCR512
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description NPN Silicon Digital Transistor • Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ) • Pb-free (RoHS compliant) package • Qu...
Datasheet PDF File BCR512 PDF File

BCR512
BCR512

Overview
NPN Silicon Digital Transistor • Built in bias resistor (R1= 4.
7 kΩ, R2= 4.
7 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR512 32 1 C 3 R1 R2 1 B Type BCR512 2 E EHA07184 Marking XFs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg 50 50 30 10 500 330 150 -65 .
.
.
150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refe...


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