Part Number
|
NCE12P09S |
Manufacturer
|
NCE Power Semiconductor |
Description
|
P-Channel Enhancement Mode Power MOSFET |
Published
|
Jun 2, 2018 |
Detailed Description
|
http://www.ncepower.com
Pb Free Product
NCE12P09S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE1216 ...
|
Datasheet
|
NCE12P09S
|
Overview
http://www.
ncepower.
com
Pb Free Product
NCE12P09S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .
This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
● VDS = -12V,ID = -9A RDS(ON) 22mΩ @ VGS=-2.
5V RDS(ON) 18mΩ @ VGS=-4.
5V
● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge
Schematic diagram
Application
● PWM applications ● Load switch ● Battery charge in cellular handset
Marking and pin assignment
SOP-8 top view
Package marking and ordering i...
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