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NCE12P09S

NCE Power Semiconductor
Part Number NCE12P09S
Manufacturer NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE1216 ...
Datasheet PDF File NCE12P09S PDF File

NCE12P09S
NCE12P09S

Overview
http://www.
ncepower.
com Pb Free Product NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .
This device is suitable for use as a load switching application and a wide variety of other applications.
General Features ● VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.
5V RDS(ON) < 18mΩ @ VGS=-4.
5V ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Schematic diagram Application ● PWM applications ● Load switch ● Battery charge in cellular handset Marking and pin assignment SOP-8 top view Package marking and ordering information Device Marking Device Device Package NCE12P09S NCE12P09S SOP-8 Reel Size Ø330mm Tape Width 12mm Quantity 2500 units Absolute maximum ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-C...


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