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Part Number
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NCE01P18 |
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Manufacturer
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NCE Power Semiconductor |
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Description
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P-Channel Enhancement Mode Power MOSFET |
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Published
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Jun 2, 2018 |
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Detailed Description
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http://www.ncepower.com
Pb Free Product
NCE01P18
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P18 ...
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Datasheet
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NCE01P18
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Overview
http://www.
ncepower.
com
Pb Free Product
NCE01P18
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
General Features
● VDS =-100V,ID =-18A RDS(ON) 100mΩ @ VGS=-10V
(Typ:85mΩ)
● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance
Application
● Power management in notebook computer ● Portable equipment and battery powered systems
Schematic diagram Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220...
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