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NCE01P03S

NCE Power Semiconductor
Part Number NCE01P03S
Manufacturer NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03...
Datasheet PDF File NCE01P03S PDF File

NCE01P03S
NCE01P03S

Overview
http://www.
ncepower.
com Pb Free Product NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
General Features ● VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.
5V (Typ:200mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density celldesign for ultra low on-resistance Schematic diagram Application ● Power switch ● DC/DC converters Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package NCE01P03S NCE01P03S SOP-8 Reel Size Ø330mm SOP-8 top view Tape width 12mm Quantity 4000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continu...


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