CEG8304
Dual P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-30V, -3.
6A, RDS(ON) = 58mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
D1 1 S1 2 S1 3 G1 4
G2 S2 S2 D
TSSOP-8
G1 S1 S1 D
8 D2 7 S2 6 S2 5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -3.
6 IDM -14
Maximum Power Dissipation
PD 1.
25
Operating and Store Temperature Range
TJ,Tstg
-55 to ...