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CEG8304

CET
Part Number CEG8304
Manufacturer CET
Description Dual P-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS(ON) = 58mΩ @VG...
Datasheet PDF File CEG8304 PDF File

CEG8304
CEG8304

Overview
CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.
6A, RDS(ON) = 58mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
D1 1 S1 2 S1 3 G1 4 G2 S2 S2 D TSSOP-8 G1 S1 S1 D 8 D2 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -3.
6 IDM -14 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2008.
June http://www.
cetsemi.
com...


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