CEH3688
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 3.
0A, RDS(ON) = 78mΩ @VGS = 10V.
RDS(ON) = 100mΩ @VGS = 4.
5V.
RDS(ON) = 155mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6
3 2 1
TSOP-6
D1 S1 D2 654
1 23 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±12
ID 3 IDM 12
Maximum Power Dissipation
PD 1.
14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resista...