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CEH3688

CET
Part Number CEH3688
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEH3688 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V...
Datasheet PDF File CEH3688 PDF File

CEH3688
CEH3688

Overview
CEH3688 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 3.
0A, RDS(ON) = 78mΩ @VGS = 10V.
RDS(ON) = 100mΩ @VGS = 4.
5V.
RDS(ON) = 155mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6 3 2 1 TSOP-6 D1 S1 D2 654 1 23 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±12 ID 3 IDM 12 Maximum Power Dissipation PD 1.
14 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resista...


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