CEM2030
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
FEATURES
20V, 6A, RDS(ON) = 30mΩ @VGS = 4.
5V.
RDS(ON) = 40mΩ @VGS = 2.
5V.
-20V, -4.
3A, RDS(ON) = 90mΩ @VGS = -4.
5V.
RDS(ON) = 120mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2 87 65
1234 S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 20
VGS ±12
ID 6 IDM 35
P-Channel -20
±12
-4.
3 -17
Maximum Power Dissipation
PD 2.
0
Operatin...