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CEM2082

CET
Part Number CEM2082
Manufacturer CET
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description CEM2082 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) =...
Datasheet PDF File CEM2082 PDF File

CEM2082
CEM2082

Overview
CEM2082 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.
5V.
RDS(ON) = 18mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D D 7 D 6 D 5 5 Lead free product is acquired.
Surface mount Package.
8 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 11 40 2.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W Specification and data are subject to change without notice .
1 Rev 1.
2006.
January http://www.
cetsemi.
com CEM2082 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gat...


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