Part Number
|
CY14B104NA |
Manufacturer
|
Cypress Semiconductor |
Description
|
4-Mbit (512K x 8/256K x 16) nvSRAM |
Published
|
Jun 17, 2018 |
Detailed Description
|
CY14B104LA CY14B104NA
4-Mbit (512K × 8/256K × 16) nvSRAM
4-Mbit (512K × 8/256K × 16) nvSRAM
Features
■ 20 ns, 25 ns, an...
|
Datasheet
|
CY14B104NA
|
Overview
CY14B104LA CY14B104NA
4-Mbit (512K × 8/256K × 16) nvSRAM
4-Mbit (512K × 8/256K × 16) nvSRAM
Features
■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K × 8 (CY14B104LA) or 256K × 16
(CY14B104NA)
■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA)
■ Pb-free and restriction of hazardous substances (RoHS) compliant
■ Hands off automatic STORE on power-down with only a small capacitor
Functional Description
■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and recall cycles ■ 1 million...
Similar Datasheet