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CY14B104NA

Part Number	CY14B104NA
Manufacturer	Cypress Semiconductor
Description	4-Mbit (512K x 8/256K x 16) nvSRAM
Published	Jun 17, 2018
Detailed Description	CY14B104LA CY14B104NA 4-Mbit (512K × 8/256K × 16) nvSRAM 4-Mbit (512K × 8/256K × 16) nvSRAM Features ■ 20 ns, 25 ns, an...
Datasheet	CY14B104NA PDF File

Overview

CY14B104LA CY14B104NA 4-Mbit (512K × 8/256K × 16) nvSRAM 4-Mbit (512K × 8/256K × 16) nvSRAM Features ■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA) ■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) ■ Pb-free and restriction of hazardous substances (RoHS) compliant ■ Hands off automatic STORE on power-down with only a small capacitor Functional Description ■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and recall cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell.
The memory is organized as 512K by...

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