Part Number
|
VS5812AI |
Manufacturer
|
Vanguard Semiconductor |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Jun 19, 2018 |
Detailed Description
|
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® T...
|
Datasheet
|
VS5812AI
|
Overview
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.
5 V VitoMOS® Technology 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VS5812AI
55V/40A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID
55 V 9.
5 mΩ 13.
5 mΩ 40 A
TO-251
Part ID VS5812AI
Package Type TO-251
Marking 5812AI
Tape and reel information 75pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maxi...
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