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VS5812AE

Vanguard Semiconductor
Part Number VS5812AE
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® T...
Datasheet PDF File VS5812AE PDF File

VS5812AE
VS5812AE

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS5812AE 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 55 V 10 mΩ 14.
5 mΩ 40 A PDFN3333 Part ID VS5812AE Package Type PDFN3333 Marking 5812AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD M...


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