| Part Number | CS60N06A |
| Manufacturer | CASS |
| Title | N-Channel Trench Power MOSFET |
| Description | The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON... |
| Features |
● VDS=60V；ID=68A@ VGS=10V； RDS(ON)8.4mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS60N06A To-220 Top View Schematic Diagram VDS = 60 V ID = 68A RDS(ON) = 7mΩ Package Marking and Order... |
| File Size | 624.76KB |
| Datasheet |
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CS60N06 : The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDS=60V；ID=80A@ VGS=10V； RDS(ON)7.2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS60N06 To-220 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS60N06 CS60N06 TO-220 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V.
CS60N06AQ3 : CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is PDFN5×6, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame.
CS60N06C4 : CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance（Rdson≤10mΩ） l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame.