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CS60N06C4

Part Number	CS60N06C4
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS60N06 C4 ○R General Description： CS60N06 C4, the silicon N-channel Enhanced VDMOSFE...
Datasheet	CS60N06C4 PDF File

Overview

Silicon N-Channel Power MOSFET CS60N06 C4 ○R General Description： CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance（Rdson≤10mΩ） l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and ch...

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