2N5716 (SILICON) 2N5717 2N5718
SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT
TRANSISTORS
Depletion Mode Junction Field·Effect
Transistors designed for audio amplifiers in low·power or battery operated applications.
• Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.
0 mAde - 2N5717 800 /lAde to 4.
0 mAde - 2N 5718
I• High Forward Transadmittance @ VDS = 15 Vdc, f = 1.
0 kHz Vls\= 350 /lmhos (Typ) @ ID = 50 /lAde - 2N5716 550/lmhos (Typ) @ ID = 200/lAdc - 2N5717 900/lmhos (Typ) @ ID = 800 /lAde - 2N5718 • Low Noise Voltage -
en = 75 nVIj""HZ (Max) @ f = 1.
0 kHz
• Drain and Source Interchangeable
LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT...