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2N5717

ETC
Part Number 2N5717
Manufacturer ETC
Description SILICON LOW NOISE N-CHANNEL JUNCTION FET
Published Jul 12, 2018
Detailed Description 2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Fi...
Datasheet PDF File 2N5717 PDF File

2N5717
2N5717


Overview
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designed for audio amplifiers in low·power or battery operated applications.
• Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.
0 mAde - 2N5717 800 /lAde to 4.
0 mAde - 2N 5718 I• High Forward Transadmittance @ VDS = 15 Vdc, f = 1.
0 kHz Vls\= 350 /lmhos (Typ) @ ID = 50 /lAde - 2N5716 550/lmhos (Typ) @ ID = 200/lAdc - 2N5717 900/lmhos (Typ) @ ID = 800 /lAde - 2N5718 • Low Noise Voltage - en = 75 nVIj""HZ (Max) @ f = 1.
0 kHz • Drain and Source Interchangeable LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS en = 75 nV/.
JHz 'MAXIMUM RATINGS Rating Drai n~Gate Vol tage Reverse Gate-Source Voltage Forward Gate Current, Total Power Dissipation @ TA = 25°C Derate above 2SoC Operating Channel Temperature Storage Temperature Range Symbol VOG VGSR IGF Po Tehannel Tstg Value 40 40...


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