DatasheetsPDF.com

2N5798

Part Number 2N5798
Manufacturer ETC
Description SILICON P-CHANNEL JUNCTION FET
Published Jul 13, 2018
Detailed Description 2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Fi...
Datasheet 2N5798





Overview
2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Field·Effect Transistors de· signed primarily for low-power, audio amplifier applications.
• Low Reverse Transfer Capacitance Crss = 1.
0 pF (Maxi • Drain and Source Interchangeable • Low Gate Reverse Current - IGSS = 1.
0 nAdc (Maxi • Unibloc Plastic Package Encapsulation P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC Derate above 25°C Operating and Storage Junction Temperature Range "'Indicates JEDEC Registered Data.
Symbol VOS V...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)