2N5865 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR·
.
designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications.
• Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc
• DC Current Gain Specified - 1.
0 mA to 500 mA • Turn·On Time .
.
ton = 120 ns (Max) @ IC = 500 mAdc
PNPSILICON GENERAL-PURPOSE
TRANSISTOR
MAXIMUM RATINGS
Rating Collector·Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC
Derate above 2SoC Total Device Dissipation @TC == 2SoC
Derate above 25°C Operating and Storage Junction
Temperature Range
*Indicates JEDEC Regist...