2N5347

2N5344 : ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -250 -250 -5 -1.0 -0.5 40 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.38 UNIT ℃/W isc Website：www.iscse.

2N5344 : 2N5344 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar PNP Device. VCEO = 250V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 250.

2N5344A : 2N5344A Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar PNP Device. VCEO = 250V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 25.

2N5345 : 2N5344 (SILICON) 2N5345 ~ . CASE80 , (T0-66) Collector connected to case High voltage power PNP silicon transistors designed for high-voltage switching and amplifier applications. ST~I':to 0 2 0( : ) BASE 2. EMIITER @1 CASE. COLLECTOR MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current - Continuous IC Base Current - Continuous Total Device Dissipation @TC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range IB PD TJ, Tstg THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case eJC 2N5344 2N5345 Unit 250 300 Vdc 250 300 Vdc 5.0 Vdc 1.0 Adc.

2N5345 : ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -280V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product- : fT= 60MHz(Min)@ IC= -0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -280 V VCEO Collector-Emitter Voltage -280 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.0 A IB Base Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ TH.

2N5345A : 2N5345A Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 300V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 30.

2N5346 : 53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .. designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 7.0 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base CUrrent Total Device Dissipation@ TC = 25'C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ• Tstg 2NS346 2NS347 80 2NS348 2NS349 100 .

2N5346 : 7 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N6288 7 30 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5490 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N5494 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3878 7 50 50 200 Note 1 2 Note 1 Note 1 35 TO-66 2N6290 7 50 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5492 7 55 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3487 7 60 20 60 3 1.2 3 10 115 TO-61 2N3490 7 60 40 120 5 1.5 5 10 115 TO-61 2N587.

2N5347 : 7 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N6288 7 30 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5490 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N5494 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3878 7 50 50 200 Note 1 2 Note 1 Note 1 35 TO-66 2N6290 7 50 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5492 7 55 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3487 7 60 20 60 3 1.2 3 10 115 TO-61 2N3490 7 60 40 120 5 1.5 5 10 115 TO-61 2N587.

2N5348 : 53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .. designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 7.0 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base CUrrent Total Device Dissipation@ TC = 25'C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ• Tstg 2NS346 2NS347 80 2NS348 2NS349 100 .

2N5348 : 7 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N6288 7 30 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5490 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N5494 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3878 7 50 50 200 Note 1 2 Note 1 Note 1 35 TO-66 2N6290 7 50 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5492 7 55 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3487 7 60 20 60 3 1.2 3 10 115 TO-61 2N3490 7 60 40 120 5 1.5 5 10 115 TO-61 2N587.

2N5349 : 53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .. designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 7.0 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base CUrrent Total Device Dissipation@ TC = 25'C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ• Tstg 2NS346 2NS347 80 2NS348 2NS349 100 .

2N5349 : 7 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N6288 7 30 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5490 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N5494 7 40 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3878 7 50 50 200 Note 1 2 Note 1 Note 1 35 TO-66 2N6290 7 50 30 150 Note 1 3.5 Note 1 Note 1 40 TO-257 2N5492 7 55 20 100 Note 1 1 Note 1 Note 1 50 TO-257 2N3487 7 60 20 60 3 1.2 3 10 115 TO-61 2N3490 7 60 40 120 5 1.5 5 10 115 TO-61 2N587.