SILICON N CHANNEL MOS TYPE (7T-MOS)
2SK355
°
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING
REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
FEATURES
.
Low Drain-Source ON Resistance : RDS(0N) = 0.
12O(Typ.
.
High Forward Transfer Admittance : 1 Yf s | =6S(Typ.
.
Low Leakage Current : lGSS =il0 °nA(Max.
) @ Vq$=±20V
.
Enhancement -Mode
I DSS=lmA(Max.
) @ VD S=150V
: Vfh=l .
5 ~ 3.
5V @ lQ=lmA
INDUSTRIAL APPLICATIONS Unit in mm
^2&0MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Drain-Source Voltage
SYMBOL VDSX
RATING 150
UNIT
Gate-Source Voltage
VgSS
±20
Drain Current
DC Pulse
Drain Power Dissipation (Tc=25°C)
Channel Temperature
Storage Temperature Range
...