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SILICON
NPN EPITAXIAL PLANAR TYPE
)
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS.
(28V SUPPLY VOLTAGE USE)
FEATURES
.
Specified 28V, 28MHz Characteristics : Output Power : P o =150WpeP : Minimum Gain : Gpe=12.
2dB : Efficiency : ^ c =35%(Min.
: Intermodulation Distortion : IMD=-30dB(Max.
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL
VCBO V CES v CEO v EBO
RATING 60 60 35
20
PC 250
Tstg
175
-65-175
UNIT
°C
JEDEC
1.
EMITTER 2.
BASE 3.
EMITTER 4.
COLLECTOR
EIA J TOSHI...