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2SC2500

Toshiba Semiconductor
Part Number 2SC2500
Manufacturer Toshiba Semiconductor
Description TRANSISTOR
Published Mar 22, 2005
Detailed Description www.DataSheet.co.kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applicati...
Datasheet PDF File 2SC2500 PDF File

2SC2500
2SC2500

Overview
www.
DataSheet.
co.
kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 30 30 10 6 2 5 0.
5 900 150 −55 to 150 A Unit V V V JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A A mW °C °C Weight: 0.
36 g (typ.
) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-09 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 2SC2500 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO VCEO VEBO hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 ...


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