SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
STROBO FLASH APPLICATIONS.
AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES .
MIN.
h FE of 70 at -2V, -8A .
-10A Rated Collector Current .
MAX.
VcE(sat) of -0.
5V at -8A Iq .
20W at 25°C Case Temperature
Unit in mm
10.
3MAX„ 03.
2 + 0.
2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Base Current
DC Pulse
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VcEO v EB0 ic ICP
PC
T stg
RATING -50 -20
-10 -20
2.
0 20
150
-55-150
UNIT
1.
BASE 2.
COLLECTOR 3.
EMITTER
TOSHIBA Weight : 2 .
lg
°C
2-10L1A
ELECTRICAL CHARA...