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2SA1301

Toshiba
Part Number 2SA1301
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Jul 17, 2018
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3280 . Recommend for 80W...
Datasheet PDF File 2SA1301 PDF File

2SA1301
2SA1301

Overview
: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS.
FEATURES .
Complementary to 2SC3280 .
Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
2SA1301 Unit in mm 20.
5MAX.
0Z.
3±&2 | E MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO Vebo ic IB PC T.
1 T stg RATING -160 -160 -5 -12 -1.
2 UNIT V V V A A 120 W 150 -55-150 °C °C 5.
45±Q15 lOO C5 CS +1 \\i X BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER TOSHIBA 2-21F1A Weight : 9.
75g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO lEBO v (BR) CEO VC B=-160V, I E=0 VEB=-5V, I C=0 IC=-50mA, IB=0 DC Current Gain h FE(l) (Note) VCE=-5V, I C=-1A Collector-Emitter...


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