:)
SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES .
Low Collector Saturation Voltage
: VCE ( sat )=-0.
4V(Max.
) at I C=-6A .
High Speed Switching Time : t st g=l.
0As(Typ.
.
Complementary to 2SC3346
Unit in mm 10.
3MAX.
^3.
6ia2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
RATING
-80
UNIT
2.
5 4
2.
5 4
X
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
VcEO v EBO ic IB PC
stg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I CBO
Emitter Cut-off Current
lEBO
-...