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2SB596

Part Number 2SB596
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • Good Linearity of hp E . • Comp...
Datasheet 2SB596





Overview
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
FEATURES • Good Linearity of hp E .
• Complementary to 2SD526.
• Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage vCEO Emitter-Base Voltage Collector Current Emitter Current VEB0 XC IE Base Current IB Collector Power Dissipation (Tc=25°C) pc Junction Temperature T J Storage Temperature Range T stg RATING -80 -80 -5 -4 4 -3 30 150 -55^150 UNIT V V V A A A W °c °c 2.
54 *H i-j *" = B 1 ,2.
54 in * i 1 i 1 1.
BASE 2.
COLL£CTOR(HEAT SINK; 3.
EMITTER JED...






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