SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1243
POWER AMPLIFIER APPLICATIONS LttK KHUiU MNU LAK b I LKtU UU I PU I blAbt AP PLICATIONS.
FEATURES .
Good Linearity of hEE .
Complementary to 2SC3073
&8MAX.
I52±0i2
F
Unit in mm
Si
o .
0.
6 MAX
-J
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB
?C
T
J
T stg
RATING UNIT
-30 V
-30 V
-5 V
-3 A
-0.
6
A
1.
0 W
10
150 -55 -150
°C
o C
a 95 MAX.
.
!
j
Q6±ai5
|
) li
M
s
o w H
a6MAX.
a
.
D
2.
3 2.
3
gpi efu rfjJL
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