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2SA1200

Toshiba Semiconductor
Part Number 2SA1200
Manufacturer Toshiba Semiconductor
Description SILICON PNP TRIPLE DIFFUSED TRANSISTOR
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications ...
Datasheet PDF File 2SA1200 PDF File

2SA1200
2SA1200

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.
) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) −150 −150 −5 −50 −10 500 800 V V V mA mA mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: 2SA1200 mounted on ceramic substrate (250 mm2 × 0.
8 t) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) 1 2002-08-19 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = −150 V, IE = 0 VEB = −5 V, IC = 0 hFE (Note 2) VCE = −5 V, IC = −10 mA VCE (sat) IC = −10 mA, IB = −1 mA VBE VCE = −5 V, IC = −30 mA fT VCE = −30 V, IC = −10 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking Type name hFE classification BO 2SA1200 Min Typ.
Max Unit ― ― −0.
1 µA ― ― −0.
1 µA 70 ― 240 ― ― −0.
8 V ― ― −0.
9 V ― 120 ― MHz ― 4.
0 5.
0 pF 2 2002-08-19 Collector current IC (mA) −50 −40 −30 −20 −10 0 0 IC – VCE −2 mA Common emitter −1 mA Ta = 25°C −500 µA −300 µA −200 µA IB = −100 µA 0 −2 −4 −6 −8 −10 Collector-emitter voltage VCE (V) −12 hFE – IC 500 300 Ta = 100°C Common emitter VCE = −5 V 25 100 −25 50 30 10 −0.
5 −1 −3 −10 −30 Collector current IC (mA) −100 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 2SA1200 hFE – IC 500 Common emitter 300 Ta = 25°C VCE = −10 V 1...


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