File No.
582 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OOcn5LJ1]
Solid State Division
Power
Transistors 2N6354
120-Y, 10-A, 140-W
Silicon N-P-N
Transistor
For Switching Applications in Military and Industrial Equipment
JEOEC TO·3
Features:
• High VCEO(SUS): 120 V II Maximum safe-area-of operation curves
• Low saturation voltage: VCE(sat) ~ 0.
5 V
a Fast switching speeds at IC = 5 A:
tr 0.
3p.
s
ts~ljJ.
s tl ~O.
2p.
s • High dissipation rating: PT = 80 W at 1000 C
= 140 W at 250 C
RCA type 2N6354° is an epitaxial silicon n·p-n power
transistor with a multiple-emitter-site structure.
The device is supplied in the JEDEC TO·3 package_
Typical high-speed switching applicat...