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617
rnrnLJD
Solid State Division
RF
Transistors 2N6389
I,~',~I~i~ ,I II 'I /1 J
JEDECTO-72
H-1299
UHF/MATV Low-Noise Silicon N-P-N
Transistor
For High-Gain Small'Signal Applications in UHF TV RF Amplifiers and UHF MATV Amplifiers
Features:
• Low noise figure: NF = 3 dB (typ.
) at 450 MHz, 1.
5 mA = 4 dB (typ.
) at 890 MH~, 1.
5 mA = 6 dB (typ.
) at 890 MHz, 10 mA
• High gain (tuned, unneutralized): GpE = 15 dB (min.
) at 890 MHz
RCA 2N638ge is an epitaxial silicon n-p-n planar
transistor intended for low-power, small-signal applications where both low noise and high gain are desirable.
It utilizes a hermetically sealed ...