Part Number
|
ITCH22160B4 |
Manufacturer
|
Innogration |
Description
|
High Power RF LDMOS FET |
Published
|
Aug 5, 2018 |
Detailed Description
|
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22160B4 Preliminary Datasheet V1.0
2000MHz-2200MHz, 160W, 28V High...
|
Datasheet
|
ITCH22160B4
|
Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH22160B4 Preliminary Datasheet V1.
0
2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs
Description
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22160B4
Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
ITCH22160B4E
Freq (MHz)
Gmax (dB)
P-1dB (dBm)
P-3dB (dBm)
D@P-3 (%)
2110 2140 2170
...
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